EDN

GaN fundamentals: 2DEG, crystal structure, and figure of merit

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.
C&EN

Negative Capacitance for Stabilizing the Logic State in a Tunnel Field-Effect Transistor

School of Physical Sciences, Indian Association for the Cultivation of Science (IACS), 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India ...
IEEE

RRAM Mirrored and RRAM-Transistor Hybrid Single Device Logic Gates Based on Two-Dimensional Materials

Abstract: The unsustainable downscaling of Si transistor run counter to the rapid development of big data. Further geometric sizing needs industrial strategies and promotion. The two-dimensional ...
IEEE

A Comprehensive Physics-Based Compact Model for CNT Thin Film Transistors—Part I: Schottky Contact

Abstract: We present a transistor model to describe the field effect current/voltage (${I}/{V}$ ) relationship in single-wall carbon nanotube thin film transistors (CNT TFTs). Based on the nature of ...
中国日报网

Chinese researchers create advanced transistor with ultralow power consumption

BEIJING -- A team of Chinese researchers has developed the world's smallest ferroelectric transistor with ultralow power consumption, offering new insights into progress in the semiconductor industry, ...